
The circuit consists of a 13-stage Ring Oscillator (RO). This design is developed to evaluate silicon aging phenomena, focusing on measuring performance degradation caused by key reliability mechanisms: Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI).
The oscillator core comprises 13 inverting stages connected in a closed loop. To ensure symmetrical oscillation characteristics and accurate degradation modeling, the constituent inverters are tailored to maintain equal rise and fall times under nominal operating conditions.
Because the fundamental oscillation frequency ($f_{osc}$) of a 13-stage loop is relatively high, direct off-chip measurement would introduce severe parasitic loading and signal degradation. To resolve this, a 12-stage frequency divider is integrated into the signal path. This divider scales down the native frequency by a factor of $2^{12} = 4096$, shifting the signal to a lower frequency range that can be easily captured by standard laboratory instruments.
| # | Input | Output | Bidirectional |
|---|---|---|---|
| 0 | Ro_control | ||
| 1 | Not_Ro_control | ||
| 2 | |||
| 3 | |||
| 4 | |||
| 5 | |||
| 6 | |||
| 7 |
ua | PCB Pin | Internal index | Description |
|---|---|---|---|
| 0 | A5 | 5 | Output |
| 1 | A0 | 0 | DUT_Gate |
| 2 | A4 | 4 | DUT_Footer |
| 3 | A1 | 1 | DUT_Header |
| 4 | A3 | 3 | Drain_Sense |
| 5 | A2 | 2 | Drain_Force |